Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon

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We report on the modification of the local structures of (310) Σ5 grain boundary in bulk silicon as the growth of crystal and its influence on electrical activity. The grain boundary was formed via floating-zone growth method utilizing bicrystal seed. The misalignment of the seed resulted in formation of the grain boundary with small deviations of crystal orientation from the Σ5 singular coincidence orientation. The deviations consist of tilt and twist components and they were found to monotonically decrease with respect to the distance from the seed crystal accompanied by the decrease in density of dislocations on the grain boundary. The change in the grain boundary structure allows a systematic study on the correlation between the structure and the electrical activity at the GB. The density of dislocations was found to control the electrical activity and the (310) Σ5 coincidence grain boundary without any dislocations is expected to show a very low electrical activity.

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  • Materials transactions  

    Materials transactions 48(2), 143-147, 2007-02-01 

    The Japan Institute of Metals and Materials

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各種コード

  • NII論文ID(NAID)
    10018508540
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    8623626
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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