Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon

この論文にアクセスする

この論文をさがす

著者

抄録

We report on the modification of the local structures of (310) Σ5 grain boundary in bulk silicon as the growth of crystal and its influence on electrical activity. The grain boundary was formed via floating-zone growth method utilizing bicrystal seed. The misalignment of the seed resulted in formation of the grain boundary with small deviations of crystal orientation from the Σ5 singular coincidence orientation. The deviations consist of tilt and twist components and they were found to monotonically decrease with respect to the distance from the seed crystal accompanied by the decrease in density of dislocations on the grain boundary. The change in the grain boundary structure allows a systematic study on the correlation between the structure and the electrical activity at the GB. The density of dislocations was found to control the electrical activity and the (310) Σ5 coincidence grain boundary without any dislocations is expected to show a very low electrical activity.

収録刊行物

  • Materials transactions

    Materials transactions 48(2), 143-147, 2007-02-01

    公益社団法人 日本金属学会

参考文献:  21件中 1-21件 を表示

  • <no title>

    BARY A.

    J. Appl. Phys. 63, 435-438, 1988

    被引用文献1件

  • <no title>

    WANG Z. J.

    Int. Sci. 7, 197-205, 1999

    被引用文献1件

  • <no title>

    CHEN J.

    J. Appl. Phys. 96, 5490-5495, 2004

    被引用文献1件

  • <no title>

    CHEN J.

    J. Appl. Phys. 97, 033701-033706, 2005

    被引用文献1件

  • <no title>

    KITAMURA M.

    J. Crys. Growth 280, 419-424, 2005

    被引用文献1件

  • <no title>

    VYSTAVEL T.

    Int. Sci. 5, 215-222, 1997

    被引用文献1件

  • <no title>

    RANDLE V.

    Acta Mater. 46, 1459-1480, 1997

    被引用文献1件

  • <no title>

    SHIMOKAWA R.

    J. Appl. Phys. 59, 2571-2576, 1986

    被引用文献3件

  • <no title>

    KOHYAMA M.

    Phys. Status Solidi B 138, 387-397, 1986

    被引用文献2件

  • <no title>

    KOHYAMA M.

    Phys.Rev. B50, 8502-8522, 1994

    被引用文献5件

  • <no title>

    SEIFERT W.

    Semicond Sci. Technol. 8, 1687-1691, 1993

    DOI 被引用文献1件

  • <no title>

    KOHYAMA M.

    J. Phys., C 21, L695-L700, 3205-3215, 1988

    被引用文献2件

  • <no title>

    HORNSTRA J.

    Physica 26, 198-208, 1960

    DOI 被引用文献1件

  • <no title>

    BACMANN J. J.

    Phil. Mag. A 51, 697-713, 1985

    被引用文献1件

  • <no title>

    THOMSON R. E.

    Phys. Rev. B 29, 889-892, 1984

    被引用文献1件

  • <no title>

    DIVINCENZO D. P.

    Phys. Rev. Lett. 56, 1925-1928, 1986

    被引用文献3件

  • Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration

    Usami Noritaka , Kitamura Masayuki , Sugawara Takamasa , Kutsukake Kentaro , Ohdaira Keisuke , Nose Yoshitaro , Fujiwara Kozo , Shishido Toetsu , Nakajima Kazuo

    Japanese journal of applied physics. Pt. 2, Letters 44(24), L778-L780, 2005-06-10

    応用物理学会 参考文献13件 被引用文献4件

  • <no title>

    ZOOK J. D.

    Appl. Phys. Lett. 37, 223-226, 1980

    被引用文献1件

  • <no title>

    SHOCKLEY W.

    Phys. Rev. 87, 835, 1952

    DOI 被引用文献34件

  • <no title>

    KUSANAGI S.

    Appl. Phys. Lett. 61, 792-794, 1992

    被引用文献2件

  • <no title>

    IKEDA K.

    J. Cryst. Growth 210, 90-93, 2000

    DOI 被引用文献3件

被引用文献:  2件中 1-2件 を表示

各種コード

  • NII論文ID(NAID)
    10018508540
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    8623626
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
ページトップへ