Microstructure and Electrical Conductivity of Epitaxial SrRuO_3 Thin Films Prepared on (001), (110) and (111) SrTiO_3 Substrates by Laser Ablation

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Epitaxial SrRuO<SUB>3</SUB> (SRO) thin films were prepared on SrTiO<SUB>3</SUB> (STO) single-crystal substrates by laser ablation, and their microstructures and anisotropy of electrical conductivity were investigated. (001), (110) and (111) oriented SRO thin films were grown epitaxially on (001), (110) and (111) STO substrates at oxygen pressure of 13 Pa and substrate temperature of 973 K, respectively. Epitaxial (001) and (111) SRO thin films showed flat and smooth surface with a terrace and step structure whereas (110) SRO thin film had a faceted island-like structure. The in-plain orientation relationships of [100] SRO || [100] STO in (001) SRO/(001) STO thin films, [001] SRO || [001] STO in (110) SRO/(110) STO thin films and [112] SRO || [112] STO in (111) SRO/(111) STO thin films were identified. Epitaxial (001) SRO thin films exhibited the highest electrical conductivity of 2.4×10<SUP>5</SUP> S·m<SUP>−1</SUP> among the (001), (110) and (111) SRO thin films.

収録刊行物

  • Materials transactions  

    Materials transactions 48(2), 227-233, 2007-02-01 

    The Japan Institute of Metals and Materials

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各種コード

  • NII論文ID(NAID)
    10018508853
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    8623826
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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