シリコン半導体検出器を用いた450kV X線CT装置 450kV X-ray Computed Tomography System Using Silicon Semiconductor Detectors

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著者

    • 額賀 淳 NUKAGA Jun
    • (株)日立製作所電力グループ電力・電機開発研究所 Hitachi, Ltd. Power Systems Power & Industrial Systms R & D Laboratory
    • 上村 博 KAMIMURA Hiroshi
    • (株)日立製作所電力グループ電力・電機開発研究所 Hitachi, Ltd. Power Systems Power & Industrial Systms R & D Laboratory

抄録

A 450kV x-ray computed tomography system using silicon semiconductor detectors has been developed for non-destructive inspection and digital engineering use. Silicon semiconductor detectors output large current due to incident photons, and give good S/N against noise of circuits. But large volume silicon detectors have a large leakage current, and any change in it worsens the performance of CT image. Slight adjustment the circuits of the amplifier bias voltage reduce and control the leakage current of semiconductor detectors, so that the circuits realize long-term stability of the image quality. In addition, metal spacers are inserted between the detectors to reduce crosstalk noise caused by scattered x-rays. The noise is reduced to less than 1% of the output signal. This system realizes a short scanning time of 6sec/slice in the rotate-only mode. As an example of engineering, the scanning time of a motor cycle cylinder head is 120minutes for 800slices. Therefore, the system can acheive digital and reverse engineering, and non-destructive inspection.

収録刊行物

  • 非破壊検査 = JOURNAL OF THE JAPANESE SOCIETY FOR NON-DESTRUCTIVE INSPECTION  

    非破壊検査 = JOURNAL OF THE JAPANESE SOCIETY FOR NON-DESTRUCTIVE INSPECTION 56(2), 94-99, 2007-02-01 

    The Japanese Society for Non-Destructive Inspection

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各種コード

  • NII論文ID(NAID)
    10018542875
  • NII書誌ID(NCID)
    AN00208370
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03675866
  • NDL 記事登録ID
    8675874
  • NDL 雑誌分類
    ZM16(科学技術--科学技術一般--工業材料・材料試験)
  • NDL 請求記号
    Z14-41
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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