Current Status of GaN-Based Laser Diodes Grown on Freestanding GaN Substrate

• NAGAHAMA Shin-ichi

  LD Development Department, LD Engineering Division, Optoelectronics Products BU, Nichia Corporation.

Bibliographic Information

Other Title

• GaN基板上GaN系半導体レーザーの現状
• GaN キバンジョウ GaNケイ ハンドウタイ レーザー ノ ゲンジョウ

Abstract

The development of optical memory devices that use violet laser diodes (LDs) has progressed significantly and these devices have been commercialized. The need for high-speed recording and multilayer recording is increasing, and it is expected that even higher power LDs will be necessary in the future. In this paper, the current state of GaN-based LD research for the next generation optical memory devices is reported, and next targets are discussed. Moreover, we developed high power pure blue laser diodes for full-color laser display. The details of these pure blue LDs characteristics are reported.

Journal

• The Review of Laser Engineering

  The Review of Laser Engineering 35 (2), 65-68, 2007

  The Laser Society of Japan

Keywords

• Laser diode (LD)
• AlInGaN
• GaN substrate
• Blue laser

Details

• CRID: 1390282679624633472
• NII Article ID: 10018544444
• NII Book ID: AN00255326
• DOI: 10.2184/lsj.35.65
• COI: 1:CAS:528:DC%2BD2sXjsFSis7o%3D
• ISSN: 13496603
• ISSN: 03870200
• NDL BIB ID: 8712066
• Web Site: http://id.ndl.go.jp/bib/8712066
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8712066
• Web Site: https://www.jstage.jst.go.jp/article/lsj/35/2/35_65/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed