高効率・高出力GaN系405nmレーザー [in Japanese] High-Efficient and High-Power GaN-Based 405nm Laser Diodes [in Japanese]
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Existence of large internal loss due to indium compositional fluctuation at InGaN well was shown experimentally. By adopting small optical confinement factor in the well layer (Γ<SUB>well</SUB>) to reduce optical absorption, the slope efficiency of the LD was improved from 1.5 W/A to 1.85 W/A (highest recorded). As a result, kink-free operation up to 300 mW at 80°C/CW was achieved.
rle 35(2), 69-72, 2007-02-15
The Laser Society of Japan