高効率・高出力GaN系405nmレーザー High-Efficient and High-Power GaN-Based 405nm Laser Diodes
Existence of large internal loss due to indium compositional fluctuation at InGaN well was shown experimentally. By adopting small optical confinement factor in the well layer (Γ<SUB>well</SUB>) to reduce optical absorption, the slope efficiency of the LD was improved from 1.5 W/A to 1.85 W/A (highest recorded). As a result, kink-free operation up to 300 mW at 80°C/CW was achieved.
レーザー研究 35(2), 69-72, 2007-02-15
The Laser Society of Japan