Near-Field Optical Recording/Readout Using a 405nm Wavelength GaN Laser Diode

• SAITO Kimihiro

  Material Laboratories, Sony Corporation

• SHINODA Masataka

  Material Laboratories, Sony Corporation

• ISHIMOTO Tsutomu

  Material Laboratories, Sony Corporation

• NAKAOKI Ariyoshi

  Material Laboratories, Sony Corporation

• YAMAMOTO Masanobu

  Material Laboratories, Sony Corporation

Bibliographic Information

Other Title

• GaN系405nm半導体レーザーを用いた近接場光記録再生
• GaNケイ 405nm ハンドウタイ レーザー オ モチイタ キンセツバ ヒカリ キロク サイセイ

Abstract

Near-field recording/readout using a solid immersion lens (SIL) is capable of achieving a numerical aperture (NA) of greater than unity and a higher storage density than conventional optical disc systems. In near-field recording using a SIL, a material having a higher refractive index results in a smaller spot size, as does using a shorter wavelength light source. However, the conventionally used GaN 405-nm laser diode (LD) still has several advantages over shorter wavelength light sources; for example, it can achieve a higher recording density and it is possible to produce more reliable near-field recording/readout systems based on it. We describe a trial that seeks to achieve a higher data transfer rate using a 1.84-NA dual-channel near-field recording/readout system that employs a monolithic dual-beam blue LD.

Journal

• The Review of Laser Engineering

  The Review of Laser Engineering 35 (2), 86-90, 2007

  The Laser Society of Japan

Keywords

• Near-field recording
• Solid immersion lens (SIL)
• Blue laser diode
• Multi-channel laser diode

Details

• CRID: 1390282679625206400
• NII Article ID: 10018544504
• NII Book ID: AN00255326
• DOI: 10.2184/lsj.35.2_86
• ISSN: 13496603
• ISSN: 03870200
• NDL BIB ID: 8712109
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8712109
• Web Site: https://www.jstage.jst.go.jp/article/lsj/35/2/35_86/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed