Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8

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Ni silicide film was deposited by chemical vapor deposition (CVD) using an Ni(PF3)4/Si3H8 gas system. Ni(PF3)4 has no carbon atoms in its molecules and has sufficiently high vapor pressure for a mass flow controller to be used. We selected Si3H8 as the silicon precursor, which was decomposed by the interaction of a metalorganic Ni precursor at a low temperature at which thermal decomposition could not occur. Using these precursors, Ni silicide film was deposited at low temperatures (${\sim}160$ °C). The deposited Ni silicide film was polycrystalline and had low crystallinity. Ni2Si and Ni5Si2 were also formed. Varying the Si3H8 flow rate and substrate temperature changed the Si/Ni ratio of the films resulting in the flat-band voltage ($V_{\text{fb}}$) for the Ni silicide electrode shifting with the Si/Ni ratio. This CVD-deposited Ni silicide should be able to be applied to the fabrication of metal gate in future metal oxide semiconductor field-effect transistors (MOSFETs).

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 474-477, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018544622
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8650759
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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