# Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF3)4 and Si3H8

## 抄録

Ni silicide film was deposited by chemical vapor deposition (CVD) using an Ni(PF3)4/Si3H8 gas system. Ni(PF3)4 has no carbon atoms in its molecules and has sufficiently high vapor pressure for a mass flow controller to be used. We selected Si3H8 as the silicon precursor, which was decomposed by the interaction of a metalorganic Ni precursor at a low temperature at which thermal decomposition could not occur. Using these precursors, Ni silicide film was deposited at low temperatures (${\sim}160$ °C). The deposited Ni silicide film was polycrystalline and had low crystallinity. Ni2Si and Ni5Si2 were also formed. Varying the Si3H8 flow rate and substrate temperature changed the Si/Ni ratio of the films resulting in the flat-band voltage ($V_{\text{fb}}$) for the Ni silicide electrode shifting with the Si/Ni ratio. This CVD-deposited Ni silicide should be able to be applied to the fabrication of metal gate in future metal oxide semiconductor field-effect transistors (MOSFETs).

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 474-477, 2007-02-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018544622
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8650759
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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