Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

• Chih-Yuan Chan

• Ting-Chi Lee

• Shawn S. H. Hsu

Bibliographic Information

Other Title

• Impacts of Gate Recess and Passivation on AlGaN GaN High Electron Mobility Transistors

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (2), 478-484, 2007-02

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• HEMT
• current collapse
• flicker noise

Details

• CRID: 1520290882047356544
• NII Article ID: 10018544630
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.46.478
• NDL BIB ID: 8650769
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8650769
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.478
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.478/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles