Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-$k$ SiOC Interconnects

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著者

    • Hsu Yung-Lung Hsu Yung-Lung
    • VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan
    • Fang Yean-Kuen Fang Yean-Kuen
    • VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan
    • Chou Tse-Heng
    • VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan

抄録

For complementary metal–oxide–semiconductor (CMOS) technology beyond 90 nm with a very narrow line width, one critical issue is the line edge corrosion in Cu interconnects and the succeeding via process failure. The mechanism of Cu line edge corrosion resulting from the hydrophobic characteristic of low-$k$ SiOC dielectric after the chemical mechanical planarization (CMP) process was studied in detail through the scanning electron microscopy (SEM) analysis and contact angle measurements. The hydrophobic characteristic of low-$k$ dielectric induces a high surface tension that pushes the H2O2 molecules contained in CMP slurry toward the edge of the Cu line, thus enhancing the corrosion reaction. We illustrate the mechanism comprehensively using a schematic model.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 530-535, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018544794
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8650974
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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