Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown $m$-Plane GaN Films

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The structural and optical properties of nonpolar ($1\bar{1}00$) $m$-plane InGaN/GaN multiple quantum wells (MQWs), grown simultaneously on reduced-defect lateral epitaxially overgrown (LEO) $m$-plane GaN and high-defect-density planar $m$-plane GaN, were investigated. Atomic force microscopy images of the LEO $m$-plane MQW sample revealed the presence of smooth steps on the Ga-face wings. The presence of stacking-fault-related defects was observed in the window and the N-face wing regions. Transmission electron microscopy on the sample revealed abrupt quantum well interfaces. High-resolution X-ray diffraction analysis showed that the In incorporation was the same in the LEO sample and in the planar sample. Spot-excitation cathodoluminescence measurement revealed a similar emission wavelength for the nearly defect-free laterally overgrown regions and the defective window regions. However, the emission from the reduced-defect-density wings of the LEO $m$-plane GaN was more than six times stronger than the emission from the neighboring defective windows. Wide-area photoluminescence measurement showed a similar emission wavelength for the LEO sample and the planar MQW sample.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 542-546, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018544840
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8651033
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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