p-GaN Cathode Degradation Correlated with Hydrogen Passivation during Water Photolysis under UV Light

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著者

    • Takagi Daigo
    • Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
    • Narumi Toru
    • Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
    • Kobayashi Naoki
    • Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
    • Yamamoto Jun
    • R&D Center, Nippon EMC., Ltd., Tama, Tokyo 206-0001, Japan
    • Ban Yuzaburo
    • R&D Center, Nippon EMC., Ltd., Tama, Tokyo 206-0001, Japan

抄録

We investigated the mechanism of p-GaN cathode degradation in Na2SO4 solution under UV light irradiation. During water photolysis, photocurrent and hydrogen production decreased with time at a zero bias. Samples degraded by UV light irradiation showed an increase in photoluminescence (PL) intensity and a decrease in hole concentration compared with those before UV light irradiation. Annealing the degraded samples at 850 °C in N2 ambient resulted in a decrease in PL intensity and an increase in hole concentration. These changes suggest that hydrogen passivation occurs as the mechanism of p-GaN cathode degradation during water photolysis.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 572-573, 2007-02-15 

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10018544972
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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