Reduction of Process-induced Damage and Improvement of Imprint Characteristics in SrBi2Ta2O9 Capacitors by Postmetallization Annealing

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著者

    • Ashikaga Kinya Ashikaga Kinya
    • Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
    • Takaya Koji Takaya Koji
    • Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
    • Kanehara Takao [他] Kanehara Takao
    • Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
    • Yoshimaru Masaki
    • Semiconductor R&D Division, Semiconductor Business Group, Oki Electric Industry Co., Ltd., 550-1 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
    • Koiwa Ichiro
    • Department of Applied Material and Life Science, Faculty of Engineering, Kanto Gakuin University, 1-50-1 Mutsuurahigashi, Kanazawa-ku, Yokohama 236-8501, Japan

抄録

We investigated the effect of process damage induced after capacitor etching procedures in the process of ferroelectric random access memory (FeRAM) fabrication for SrBi2Ta2O9 capacitors. We found that this damage was suppressed by postmetallization annealing (400 °C, 30 min in O2) and that imprint characteristics were improved by the annealing, because active elements such as hydrogen and water induced during contact hole formation on tungsten plugs and first-metal formation are adsorbed effectively by the annealing before they penetrate into these capacitors.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 695-697, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018545436
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8651597
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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