Simply Controlled Growth Condition of Thin Films of InTaO4(111) on MgO(001) Substrates by Ar Ion Beam Sputtering
An InTaO4(111) film was grown on an MgO(001) substrate at 700 °C by sputtering a Ta target covered partly with In sheets in an area ratio of $7:1$ with an Ar ion beam accelerated at 1.2 kV, and an O2 ion beam accelerated at 0.1 kV supplied simultaneously during the deposition. When the In sheet area is increased or the substrate temperature is decreased, the In2O3(111) and InTaO4 regions are grown together. Under the deposition condition without the O2 ion beam but with O2 gas, both the In2O3(001) regions and the amorphous Ta2O5 regions are grown without the crystallized InTaO4 phase.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 774-776, 2007-02-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics