Simply Controlled Growth Condition of Thin Films of InTaO4(111) on MgO(001) Substrates by Ar Ion Beam Sputtering
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An InTaO4(111) film was grown on an MgO(001) substrate at 700 °C by sputtering a Ta target covered partly with In sheets in an area ratio of $7:1$ with an Ar ion beam accelerated at 1.2 kV, and an O2 ion beam accelerated at 0.1 kV supplied simultaneously during the deposition. When the In sheet area is increased or the substrate temperature is decreased, the In2O3(111) and InTaO4 regions are grown together. Under the deposition condition without the O2 ion beam but with O2 gas, both the In2O3(001) regions and the amorphous Ta2O5 regions are grown without the crystallized InTaO4 phase.
- Jpn J Appl Phys
Jpn J Appl Phys 46(2), 774-776, 2007-02-15
INSTITUTE OF PURE AND APPLIED PHYSICS