Simply Controlled Growth Condition of Thin Films of InTaO4(111) on MgO(001) Substrates by Ar Ion Beam Sputtering

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An InTaO4(111) film was grown on an MgO(001) substrate at 700 °C by sputtering a Ta target covered partly with In sheets in an area ratio of $7:1$ with an Ar ion beam accelerated at 1.2 kV, and an O2 ion beam accelerated at 0.1 kV supplied simultaneously during the deposition. When the In sheet area is increased or the substrate temperature is decreased, the In2O3(111) and InTaO4 regions are grown together. Under the deposition condition without the O2 ion beam but with O2 gas, both the In2O3(001) regions and the amorphous Ta2O5 regions are grown without the crystallized InTaO4 phase.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 774-776, 2007-02-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018545790
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8651909
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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