High Efficiency White Organic Light-Emitting Diodes from One Emissive Layer

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著者

    • Lee June Hee
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
    • Bae Jeong Woon
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
    • Yeom Geun Young
    • Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea

抄録

In this study, two-wavelength white organic light-emitting devices (WOLEDs) were fabricated using a single doped layer, which was obtained by forming a recombination zone in a single emissive layer. In this emissive layer, both blue emission and yellow emission were obtained using a 4,4$'$-bis(2,2$'$-diphenylethen-1-yl)biphenyl (DPVBi) host doped with a red fluorescent dye, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB). The white light resulted from the excitation in this single emissive layer by controlling the concentration of fluorescent dye in the emissive layer. In addition, a higher efficiency could be obtained using organic layers/Li/Al in the WOLED structure instead of organic layers/LiF/Al. The electroluminescent (EL) spectrum of the device was not sensitive to the driving voltage of the device. The obtained WOLEDs showed a maximum luminance of approximately 64,200 cd/m2 and the device began to emit light (at luminance of 0.1 cd/m2) at 3.4 V. At a luminance of approximately 100 cd/m2, the external quantum and the power efficiencies were 2.47% and 4.27 lm/W, respectively.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 806-809, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018545903
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8652019
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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