Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates

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著者

    • Kang Gil Bum Kang Gil Bum
    • Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
    • Kim Seong-Il Kim Seong-Il
    • Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
    • Park Min-Chul
    • Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
    • Kim Yong Tae
    • Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
    • Lee Chang Woo
    • Department of Nano and Electronic Physics, Kookmin University, Seoul 136-702, Korea

抄録

Dense and uniformly distributed arrays of holes and nanodots were fabricated in silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano size patterns, self-assembling resists were used to produce a layer of uniformly distributed parallel cylinders of poly(methyl methacrylate) (PMMA) in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching (RIE). Selectively deposited tungsten nanodots were formed inside nano sized trenches by low pressure chemical vapor deposition (LPCVD). The tungsten nanodots and silicon trenches were 26 and 30 nm, respectively.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(2), 856-858, 2007-02-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018546069
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8652139
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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