30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

• Masataka Higashiwaki

• Takashi Mimura

• Toshiaki Matsui

Bibliographic Information

Other Title

• 30 nm Gate AlGaN GaN Heterostructure Field Effect Transistors with a Current Gain Cutoff Frequency of 181 GHz

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (42-45), L1111-1113, 2006-11

  Tokyo : Japan Society of Applied Physics

Keywords

• heterostructure field-effect transistor
• HEFT
• catalytic chemical vapor deposition
• Cat-CVD
• fT
• maximum oscillation frequency
• fmax
• millimeter wave

Details

• CRID: 1521136280834635776
• NII Article ID: 10018632125
• NII Article ID: 210000061704
• NII Book ID: AA11906093
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.45.l1111
• NDL BIB ID: 8548051
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8548051
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.L1111
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.L1111/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles