Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature

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We have grown AlN layers on atomically flat ZnO(000$\bar{1}$) substrates by pulsed laser deposition at room temperature (RT) and investigated their structural properties. The reflection high-energy electron-diffraction (RHEED) intensity monitoring and atomic force microscopy (AFM) observations have revealed that the RT growth of AlN films proceeds by a layer-by-layer mode from the initial stage of the growth, and that the surfaces of the AlN films possess atomically-flat terraces separated by straight steps. We have also found that the AlN/ZnO heterointerfaces are atomically abrupt.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(43), L1139-L1141, 2006-11-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018632255
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548197
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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