Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles

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We evaluated a new process for low-temperature metal-induced crystallization of amorphous silicon (a-Si) films by nano-gold-particles. Amorphous silicon film (300 nm) was coated by nano-gold-particles with a density of 109 cm-2 and subsequently annealed in Ar atmosphere. The a-Si film was nearly crystallized at 400 °C for 1 h, identified by X-ray diffraction spectroscopy (XRD). The crystallization temperature was low enough due to the high activity of the nano-gold-particles. The mobility of fabricated polycrystalline silicon (poly-Si) film was about 10–20 cm2/(V$\cdot$s), which satisfies the requirements for application in thin film transistors (TFTs) or solar cells.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(43), L1146-L1148, 2006-11-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018632283
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548276
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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