Organic Thin-Film Transistors with Conductive Metal–Oxides as Source–Drain Electrodes
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We demonstrated that bottom contact (BC) configuration organic thin-film transistors (OTFTs) easily get higher performance by using conductive metal oxide (CMO) as source and drain electrodes. Although BC-OTFTs are more advantageous than top contact (TC) configuration in the viewpoint of device fabrications, it is also well-known that BC-OTFTs show poor performance compared with TC-OTFTs with the same active material. We found out that using CMO like indium tin oxide as contact electrodes enhanced performance of BC-OTFTs without any special surface treatments. This manner was truly effective for most organic semiconducting materials, for example, pentacene, polythiophene, and so on.
- Jpn J Appl Phys
Jpn J Appl Phys 45(44), L1171-L1174, 2006-11-25
INSTITUTE OF PURE AND APPLIED PHYSICS