Organic Thin-Film Transistors with Conductive Metal–Oxides as Source–Drain Electrodes

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著者

    • Ichikawa Musubu Ichikawa Musubu
    • Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokita, Ueda, Nagano 386-8567, Japan
    • You Li You Li
    • Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokita, Ueda, Nagano 386-8567, Japan
    • Koyama Toshiki
    • Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokita, Ueda, Nagano 386-8567, Japan
    • Taniguchi Yoshio
    • Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, 3-15-1 Tokita, Ueda, Nagano 386-8567, Japan

抄録

We demonstrated that bottom contact (BC) configuration organic thin-film transistors (OTFTs) easily get higher performance by using conductive metal oxide (CMO) as source and drain electrodes. Although BC-OTFTs are more advantageous than top contact (TC) configuration in the viewpoint of device fabrications, it is also well-known that BC-OTFTs show poor performance compared with TC-OTFTs with the same active material. We found out that using CMO like indium tin oxide as contact electrodes enhanced performance of BC-OTFTs without any special surface treatments. This manner was truly effective for most organic semiconducting materials, for example, pentacene, polythiophene, and so on.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(44), L1171-L1174, 2006-11-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018632412
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548472
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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