Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

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著者

    • Lee Kong-Soo Lee Kong-Soo
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Yoo Dae-Han Yoo Dae-Han
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Han Jae-Jong [他] Han Jae-Jong
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Son Gil-Hwan
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Lee Chang-Hun
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Noh Ju-Hee
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Kim Seok-Jae
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Kim Yong-Kwon
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • You Young-Sub
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Hyung Yong-Woo
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea
    • Lee Hyeon-Deok
    • Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711, Korea

抄録

Germanium (Ge) ion implantation was investigated for crystallinity enhancement during solid phase epitaxial (SPE) regrowth. Electron back-scatter diffraction (EBSD) measurement showed numerical increase of 19% of (100) signal, which might be due to the effect of pre-amorphization implantation (PAI) on silicon layer. On the other hand, electrical property such as off-leakage current of n-channel metal oxide semiconductor (NMOS) transistor degraded in specific regions of wafers. It was confirmed that arsenic (As) atoms were incorporated into channel area during Ge ion implantation. Since the equipment for Ge PAI was using several source gases such as BF3 and AsH3, atomic mass unit (AMU) contamination during PAI of Ge with AMU 74 caused the incorporation of As with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use Ge isotope of AMU 72 to suppress AMU contamination. It was effective to use enriched Ge source gas with AMU 72 in order to improve productivity.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(45), L1193-L1196, 2006-11-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018632502
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548560
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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