Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

この論文にアクセスする

この論文をさがす

著者

抄録

m-Plane $(10\bar{1}0)$ nonpolar InGaN-based light emitting diodes (LEDs) with no threading dislocations or stacking faults have been realized on m-plane GaN single crystals by conventional metal organic vapor phase epitaxy. The crystalline properties of the material, together with the structures of the LED devices, have been observed by scanning transmission electron microscopy. It is shown that dislocation-free nonpolar nitride layers with smooth surfaces can be obtained under growth conditions involving high V/III ratios, which are the optimized growth conditions for c-plane GaN. The peak wavelength of the electroluminescence emission obtained from the finished devices is 435 nm, which is in the blue region. The output power and the calculated external quantum efficiency are 1.79 mW and 3.1%, respectively, at a driving current of 20 mA.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(45), L1197-L1199, 2006-11-25 

    Japan Society of Applied Physics

参考文献:  24件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018632512
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548585
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ