Novel Planar Electrode Structure for High-Speed (${>}40$ GHz) Electroabsorption Modulators

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著者

    • Wang Jian Wang Jian
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
    • Xiong Bing Xiong Bing
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
    • Cai Peng-Fei [他] Cai Peng-Fei
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
    • Tian Jian-Bo
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
    • Sun Chang-Zheng
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
    • Luo Yi
    • State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China

抄録

A novel planar electrode structure has been developed for the fabrication of high-speed electroabsorption (EA) modulators. To reduce the modulator capacitance, a narrow high-mesa waveguide is fabricated by inductively coupled plasma (ICP) dry etching technique. A planarized electrode is then formed by inserting a thick SiO2 insulation mesa beneath the bonding pad, and photo-sensitive polymer is adopted to fill the trench between the ridge and the SiO2 mesa. The planarization procedure is carried out in a self-aligned way. The capacitance of fabricated EA modulators is estimated to be 0.12 pF, and a modulation bandwidth over 40 GHz has been demonstrated.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 45(45), L1209-L1211, 2006-11-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018632590
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8548643
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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