Surface reaction analysis of semiconductor device fabrication processes using <i>in-situ</i> electron spin resonance

• YAMASAKI Satoshi

  National Institute of Advanced Industrial Science and Technology, Diamond research center AIST

Bibliographic Information

Other Title

• 電子スピン共鳴法による半導体デバイス作製プロセスの表面反応解析
• 研究紹介 電子スピン共鳴法による半導体デバイス作製プロセスの表面反応解析
• ケンキュウ ショウカイ デンシ スピン キョウメイホウ ニ ヨル ハンドウタイ デバイス サクセイ プロセス ノ ヒョウメン ハンノウ カイセキ

Abstract

We have developed a new in-situ observation technique using electron spin resonance to detect the dynamic processes of defect creation under thin-film growth and surface modification. In this article, we show that the semiconductor device fabrication process creates many dangling bonds and its control is a key process, on the basis of experimental results of silicon oxidation, amorphous silicon growth, and SiO₂ etching.

Journal

• Oyo Buturi

  Oyo Buturi 75 (12), 1487-1491, 2006-12-10

  The Japan Society of Applied Physics

Keywords

• defect
• surface
• <i>in-situ</i>
• ESR
• P_b center
• growth
• etching

Details

• CRID: 1390282752332228224
• NII Article ID: 10018633901
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.75.12_1487
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 8560133
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8560133
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed