High-temperature GaN/SiC heterojunction bipolar transistor with high gain

• PANKOVE J. I.

収録刊行物

• Tech. Dig. IEDM, San Francisco, USA, Dec. 1994

  Tech. Dig. IEDM, San Francisco, USA, Dec. 1994 1994

詳細情報

• CRID: 1573668925158748544
• NII論文ID: 10018637321
• データソース種別:
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