MOVPE成長GaN薄膜の高密度励起条件における励起子非弾性散乱過程による発光特性

• NAKAYAMA Masaaki

  Department of Applied Physics, Graduate School of Engineering, Osaka City University

• TANAKA Hiroyasu

  Department of Applied Physics, Graduate School of Engineering, Osaka City University

• ANDO Masanobu

  Optoelectronics Technical Division, Toyoda Gosei Company Limited

• UEMURA Toshiya

  Optoelectronics Technical Division, Toyoda Gosei Company Limited

Bibliographic Information

Other Title

• Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy

Journal

• 電子情報通信学会技術研究報告. CPM, 電子部品・材料

  電子情報通信学会技術研究報告. CPM, 電子部品・材料 106 (270), 69-73, 2006-09-28

Keywords

• GaN
• exciton
• photoluminescence
• exciton-exciton scattering
• exciton-electron scattering
• MOVPE

Details

• CRID: 1573105975183278720
• NII Article ID: 10018646327
• NII Book ID: AN10012932
• Text Lang: en
• Data Source:
  • CiNii Articles