分光感度応答電流を使用した接合特性解析の方法と応用 Application of the Spectral Sensitivity for the Semiconductor Junction Analysis

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In this report, the spectral sensitivity was used for semiconductor junction analysis. This analysis is carried out by means of a photoconduction characteristic depend on the electric field strength in the material. The light absorption and the photoconduction current are in proportion, and the electric field strength in the material is known by way of comparing the photoconduction current to the light absorption. The material has different absorption coefficients each wave lengths, and has different complete light absorption lengths. Then, it is possible to select the analysis area at the material, if select appropriate wave length. From this analysis method, the electric field strength and the potential along thickness of the material can be evaluated. This analysis method was applied to evaluate the electric field strength on the ITO-ZnSe junction, and the potential distribution and the depletion layer were evaluated. As a result, it was found that ZnSe layer had space charges near the junction.

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  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 127(1), 14-18, 2007-01-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018660315
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    8626001
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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