Light Extraction Simulation of Surface-Textured Light-Emitting Diodes by Finite-Difference Time-Domain Method and Ray-Tracing Method

Abstract

The light extraction efficiency ($\eta_{\text{l}}$) of surface-textured light-emitting diodes (LEDs) is calculated using a simulation based on the combination of the finite-difference time-domain (FDTD) method and the ray-tracing method. Considering the transmittance and light-scattering effects, which depend on the size of the surface-textured structure (STS), we investigated the dependence of $\eta_{\text{l}}$ on the size of the STS including the period and aspect ratio. As a result, a clear dependence on the size of the STS has been shown. Furthermore, by optimizing the size of the STS, we found $\eta_{\text{l}}$ to be about 4 times larger than that of the surface flat structure (SFS). In addition, we demonstrated that the absorption coefficient of the GaN layer ($\alpha_{\text{GaN}}$) affected $\eta_{\text{l}}$ of the STS more strongly than that of the SFS. We suggest that both wide light-scattering and a high GaN crystalline quality are important points for improving $\eta_{\text{l}}$ when texturing the top surface of LEDs.

Journal

• Jpn J Appl Phys

Jpn J Appl Phys 46(1), 31-34, 2007-01-15

INSTITUTE OF PURE AND APPLIED PHYSICS

References:  12

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Codes

• NII Article ID (NAID)
10018704113
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
ART
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
8605515
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  NDL  JSAP

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