Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
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We measured the excess carrier lifetimes in GaN by the microwave photoconductivity decay (μ-PCD) method. We characterized undoped GaN, Si-doped n-GaN, and Mg-doped p-GaN before and after etching using inductively coupled plasma (ICP). For all the samples, decay curves had both fast and slow components, and carrier lifetimes for the p-GaN were significantly shorter than those for the other samples. For the undoped GaN, ICP etching enhanced the slow component compared with the as-grown sample. This would be due to generation of hole traps by ICP etching.
- Jpn J Appl Phys
Jpn J Appl Phys 46(1), 35-39, 2007-01-15
INSTITUTE OF PURE AND APPLIED PHYSICS