# Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

## Abstract

Polycrystalline silicon (poly-Si) complementary metal–oxide–semiconductor (CMOS) circuits have been fabricated by using an advanced excimer-laser annealing method and a plasma-oxidation method. The 1-μm-long thin-film transistors (TFTs) were fabricated on arrays of laterally grown long and narrow grains, so that the majority of carriers were free from scattering at grain boundaries during propagation through the channel. The propagation delay time measured by a 21-stage ring oscillator was 175 ps and a power-delay product of $9\times 10^{-13}$ J/gate was obtained at a supply voltage of 3.3 V. The obtained propagation delay time was almost the same as those of bulk Si devices having the same gate length. Furthermore, we expect that 1-μm-long CMOS TFT circuits on glass will have a performance superior to that of 1-μm-long bulk Si devices when the short channel effect and threshold voltage fluctuation are controlled well.

## Journal

• Jpn J Appl Phys

Jpn J Appl Phys 46(1), 51-55, 2007-01-15

INSTITUTE OF PURE AND APPLIED PHYSICS

## References:  23

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## Codes

• NII Article ID (NAID)
10018704212
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
ART
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
8605620
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  NDL  JSAP

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