Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam

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著者

    • Yamazaki Yuichi Yamazaki Yuichi
    • Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    • Yamasaki Satoshi
    • Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

抄録

The etching damage induced by energy-controlled oxygen ion beam exposure on diamond was observed using electron spin resonance (ESR) and X-ray photoelectron spectroscopy (XPS). The ion energy was controlled by an extraction voltage ($V_{\text{ext}}$) ranging from 25 to 500 V. Oxygen ion beam exposure gives rise to a highly defective structure (with a spin concentration of ${\sim}10^{20}$ cm-3) observed by ESR, in which the number of defects increased with increasing $V_{\text{ext}}$. XPS measurements show that its structure is similar to that of amorphous carbon (a-C). Angle-resolved XPS showed that the defective layer existed in the surface region and its thickness was estimated to be 0.6 and 1.0 nm for $V_{\text{ext}}$ values of 250 and 500 V, respectively. The step treatment of oxygen ion beam exposure, where $V_{\text{ext}}$ and etching time were changed step by step, was proposed as an effective diamond etching method with lower etching damage in the region within 1 nm from the top surface and shorter etching time. It was also found that this method shows the removal of more etching damage than an acid treatment.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 60-64, 2007-01-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018704248
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8605675
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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