# Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam

## Abstract

The etching damage induced by energy-controlled oxygen ion beam exposure on diamond was observed using electron spin resonance (ESR) and X-ray photoelectron spectroscopy (XPS). The ion energy was controlled by an extraction voltage ($V_{\text{ext}}$) ranging from 25 to 500 V. Oxygen ion beam exposure gives rise to a highly defective structure (with a spin concentration of ${\sim}10^{20}$ cm-3) observed by ESR, in which the number of defects increased with increasing $V_{\text{ext}}$. XPS measurements show that its structure is similar to that of amorphous carbon (a-C). Angle-resolved XPS showed that the defective layer existed in the surface region and its thickness was estimated to be 0.6 and 1.0 nm for $V_{\text{ext}}$ values of 250 and 500 V, respectively. The step treatment of oxygen ion beam exposure, where $V_{\text{ext}}$ and etching time were changed step by step, was proposed as an effective diamond etching method with lower etching damage in the region within 1 nm from the top surface and shorter etching time. It was also found that this method shows the removal of more etching damage than an acid treatment.

## Journal

• Jpn J Appl Phys

Jpn J Appl Phys 46(1), 60-64, 2007-01-15

INSTITUTE OF PURE AND APPLIED PHYSICS

## References:  22

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## Codes

• NII Article ID (NAID)
10018704248
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
ART
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
8605675
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  NDL  JSAP

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