Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
Detailed device parameters necessary for the enhancement-mode operation of p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors (JHFETs) using p-type GaN gate contacts are determined by both simulation and experiments. Threshold voltage can be precisely controlled by changing the unintentionally doped AlxGa1-xN barrier layer thickness and AlN molar fraction $x$.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 115-118, 2007-01-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics