Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

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著者

    • Fujii Takahiro Fujii Takahiro
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
    • Tsuyukuchi Norio Tsuyukuchi Norio
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
    • Iwaya Motoaki
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
    • Kamiyama Satoshi
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
    • Amano Hiroshi
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
    • Akasaki Isamu
    • Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

抄録

Detailed device parameters necessary for the enhancement-mode operation of p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors (JHFETs) using p-type GaN gate contacts are determined by both simulation and experiments. Threshold voltage can be precisely controlled by changing the unintentionally doped AlxGa1-xN barrier layer thickness and AlN molar fraction $x$.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 115-118, 2007-01-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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被引用文献:  9件

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各種コード

  • NII論文ID(NAID)
    10018704414
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8605929
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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