# Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt–Er Alloy Metal Gate on HfO2 Film

## 抄録

We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function ($\Phi_{\text{m,eff}}$) of a Pt–Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the $\Phi_{\text{m,eff}}$ values of the Pt–Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ${\sim}5.1$ and ${\sim}4.8$ eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in $\Phi_{\text{m,eff}}$.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 125-127, 2007-01-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018704443
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
SHO
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8605997
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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