Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt–Er Alloy Metal Gate on HfO2 Film

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著者

    • Choi Cheljong Choi Cheljong
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Jang Moongyu Jang Moongyu
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Jun Myungsim
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Kim Taeyoub
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Park Byoungchul
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Lee Seongjae
    • IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon 305-700, Korea
    • Yang Hyundoek
    • Semiconductor Device and Material Lab., Samsung Advanced Institute of Technology (SAIT), Gyeonggi-Do 449-712, Korea
    • Jung Ranju
    • Analytical Engineering (AE) Center, Samsung Advanced Institute of Technology (SAIT), Gyeonggi-Do 449-712, Korea
    • Chang Man
    • Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea
    • Hwang Hyunsang
    • Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea

抄録

We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function ($\Phi_{\text{m,eff}}$) of a Pt–Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film and a Si substrate and a negative charge at the HfO2/IL interface, the $\Phi_{\text{m,eff}}$ values of the Pt–Er alloy metal gate before and after HPHA, extracted from the relations of equivalent oxide thickness versus flat-band voltage, are determined to be ${\sim}5.1$ and ${\sim}4.8$ eV, respectively. The increase in the density of interface dipole caused by the reduction of PtOx during HPHA could be responsible for the decrease in $\Phi_{\text{m,eff}}$.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 125-127, 2007-01-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018704443
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8605997
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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