New Technique for Fabrication of Individual Carbon-Nanotube Field Emitters

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著者

    • Lee Ming-Way Lee Ming-Way
    • Department of Physics and Center for Nanoscience and Nanotechnology, National Chung Hsing University, Taichung, 402, Taiwan, Republic of China
    • Chen Yu-Shen Chen Yu-Shen
    • Department of Physics and Center for Nanoscience and Nanotechnology, National Chung Hsing University, Taichung, 402, Taiwan, Republic of China
    • Lai Wei-Ciao [他] Lai Wei-Ciao
    • Department of Physics and Center for Nanoscience and Nanotechnology, National Chung Hsing University, Taichung, 402, Taiwan, Republic of China
    • Suen Yuen-Wuu
    • Department of Physics and Center for Nanoscience and Nanotechnology, National Chung Hsing University, Taichung, 402, Taiwan, Republic of China
    • Wu Jong-Ching
    • Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan, Republic of China

抄録

Currently, field emission experiments on individual carbon nanotubes (CNTs) are carried out by placing the CNTs inside a transmission electron microscope. In this work we report an alternative method of fabricating and measuring individual multiwalled CNT-field emitters fabricated on a silicon substrate by the e-beam lithography technique. A field emission experiment is then performed in a high-vacuum system for CNTs with various radii, lengths, interelectrode separations and tip structures. The geometrical enhancement factors $\beta$ exhibit three ranges: low ($\beta\sim 10$), medium ($\beta\sim 100$) and high ($\beta>200$) depending on whether the CNT tip is closed-tipped, open-tipped with a flat end or open-tipped with an oblique-angle end, respectively. The turn-on voltage $V_{\text{to}}$ also depends on the tip structure and the lowest $V_{\text{to}}$ occurs in open-tipped-with-oblique-angle CNTs. The geometrical enhancement factor depends on the tube geometry via a linear equation $\beta=\beta_{0}(1+d/kr)$ with $k\approx 40$ and $\beta_{0}$ equals 163 and 53 for the high-$\beta$ and medium-$\beta$ lines, respectively, where $r$ is the radius and $d$ is the CNT tip-anode spacing. The new method may open a path leading to the integration of nanotube field emitters with other miniature devices using semiconductor integrating technology.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(1), 430-433, 2007-01-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018705695
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8607197
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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