Development of Electrostatic Actuator, which enables the Stable Contact Resistance, Driven at Low Voltage

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  • Masuda Takahiro
    Advanced Device Laboratry, Corporate R&D H. Q. Omron Corporation
  • Seki Tomonori
    Advanced Device Laboratry, Corporate R&D H. Q. Omron Corporation
  • Miyaji Takaaki
    Advanced Device Laboratry, Corporate R&D H. Q. Omron Corporation
  • Sato Fumihiko
    Advanced Device Laboratry, Corporate R&D H. Q. Omron Corporation

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The switches play an important role in making the multifunctional radio communication circuit and therefore, the high-performance microminiaturized high-frequency switches are urgently expected. RF-MEMS switch with mechanical switching structure is hoped to improve both high-frequency signal loss and isolation quality simultaneously and to provide better linearity on the performance and compatibility to silicon-based circuit elements. But considering the applications, such as cellular phone and wireless-LAN, lower driving voltage and smaller switch dimensions are required.<br>In order to solve these requirements, a novel electrostatic actuator with a unique structure of movable electrodes which enables the stable contact resistance is developed for RF-MEMS switches. This actuator has slits between the movable electrodes and the restoring spring. The electrostatic actuator with a movable electrode area of 0.5mm2 was driven at low voltage of 9-11V. And no defect due to restoration shortage is observed during switching test up to 400million cycles.<br>In this paper, the results of mechanical design of the electrostatic actuator, the simulation, the experiments, and the reliability test are described

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