Fabrication and Characterization of a Schottky Barrier Diode-Type Ultraviolet Sensor using a ZnO Single Crystal
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In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 127(3), 131-135, 2007-03-01
The Institute of Electrical Engineers of Japan