双方向トレンチ横型パワーMOS内蔵バッテリー保護IC [in Japanese] Battery Protection IC Integrating Bi-directional Trench Lateral Power MOSFETs [in Japanese]
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We developed a battery protection IC integrating a low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM). In the bi-directional switches, two MOSFETs share a drain region and there is neither drain contact nor drain metal wire. The developed bi-directional switches have a breakdown voltage of 23V and a specific on-resistance of 6.8mΩmm<sup>2</sup> per one side MOSFET. Wafer-level Chip Size Package (W-CSP) is utilized, and the chip mounting area can be reduced to 3mm<sup>2</sup>, which is less than one-third of conventional multi-chip system. Parasitic wire resistance is also reduced to 5.3mΩ, which is about one-seventh of that of conventional package without thick copper layer.
- IEEJ Transactions on Sensors and Micromachines
IEEJ Transactions on Sensors and Micromachines 127(3), 261-266, 2007-03-01
The Institute of Electrical Engineers of Japan