双方向トレンチ横型パワーMOS内蔵バッテリー保護IC Battery Protection IC Integrating Bi-directional Trench Lateral Power MOSFETs

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We developed a battery protection IC integrating a low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM). In the bi-directional switches, two MOSFETs share a drain region and there is neither drain contact nor drain metal wire. The developed bi-directional switches have a breakdown voltage of 23V and a specific on-resistance of 6.8mΩmm<sup>2</sup> per one side MOSFET. Wafer-level Chip Size Package (W-CSP) is utilized, and the chip mounting area can be reduced to 3mm<sup>2</sup>, which is less than one-third of conventional multi-chip system. Parasitic wire resistance is also reduced to 5.3mΩ, which is about one-seventh of that of conventional package without thick copper layer.

収録刊行物

  • 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society  

    電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 127(3), 261-266, 2007-03-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018737942
  • NII書誌ID(NCID)
    AN10012320
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09136339
  • NDL 記事登録ID
    8732437
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-1608
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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