4.3mΩcm^2, 1100VノーマリオフSiC IE-MOSFET 4.3mΩcm^2, 1100V normally-off IEMOSFET on SiC
The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed a double-epitaxial MOSFET (DEMOSFET), in which the p-well comprises stacked two epitaxially grown p-type layers and n-type region between the p-wells is formed by ion implantation. This device exhibited a low on-resistance of 8.5mΩcm<sup>2</sup> with a blocking voltage of 600V. In this study, to further improve the performance, we newly developed a device structure named implantation and epitaxial MOSFET (IEMOSFET). In this device, the p-well is formed by selective high-concentration p+ implantation and following low-concentration p-epitaxial growth. Fabricated IEMOSFET with a buried channel exhibited superior characteristics than DEMOSFET. The extremely low specific on-resistance of 4.3mΩcm<sup>2</sup> was achieved with a blocking voltage of 1100V.
- 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society
電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 127(3), 267-272, 2007-03-01
The Institute of Electrical Engineers of Japan