4.3 m.OMEGA.cm2, 1100 V normally-off IEMOSFET on SiC

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  • Harada Shinsuke
    National Institute of Advanced Industrial Science and Technology
  • Okamoto Mitsuo
    National Institute of Advanced Industrial Science and Technology
  • Yatsuo Tsutomu
    National Institute of Advanced Industrial Science and Technology
  • Fukuda Kenji
    National Institute of Advanced Industrial Science and Technology
  • Arai Kazuo
    National Institute of Advanced Industrial Science and Technology

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Other Title
  • ４．３ｍΩｃｍ｀２´，１１００ＶノーマリオフＳｉＣ　ＩＥ‐ＭＯＳＦＥＴ
  • 4.3mΩcm2,1100VノーマリオフSiC IE-MOSFET
  • 4 3m オメガ cm2 1100V ノーマリオフ SiC IE MOSFET

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Abstract

The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed a double-epitaxial MOSFET (DEMOSFET), in which the p-well comprises stacked two epitaxially grown p-type layers and n-type region between the p-wells is formed by ion implantation. This device exhibited a low on-resistance of 8.5mΩcm2 with a blocking voltage of 600V. In this study, to further improve the performance, we newly developed a device structure named implantation and epitaxial MOSFET (IEMOSFET). In this device, the p-well is formed by selective high-concentration p+ implantation and following low-concentration p-epitaxial growth. Fabricated IEMOSFET with a buried channel exhibited superior characteristics than DEMOSFET. The extremely low specific on-resistance of 4.3mΩcm2 was achieved with a blocking voltage of 1100V.

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