Nano-gap Effects in Semiconductor Gas Sensors

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著者

    • Tamaki Jun TAMAKI Jun
    • Department of Applied Chemistry, Faculty of Science and Engineering, Ritsumeikan University
    • NAKATAYA Yoshinori
    • Department of Applied Chemistry, Faculty of Science and Engineering, Ritsumeikan University
    • KONISHI Satoshi
    • Department Micro System Technology, Faculty of Science and Engineering, Ritsumeikan University

抄録

The effect of gap size on the gas sensitivity of semiconductor gas sensor was evaluated in the NO<sub>2</sub> sensing using WO<sub>3</sub> nanosensor, the Cl<sub>2</sub> sensing using In<sub>2</sub>O<sub>3</sub> nanosensor and the H<sub>2</sub>S sensing using SnO<sub>2</sub> nanosensor. The nano-gap effect was markedly observed in the NO<sub>2</sub>-WO<sub>3</sub> system and the Cl<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> system (resistance increase), while the H<sub>2</sub>S-SnO<sub>2</sub> system showed the weak nano-gap effect. This difference resulted from the ratio (S<sub>i</sub>/S<sub>gb</sub>) of sensitivity at semiconductor oxide-electrode interface (S<sub>i</sub>) to at grain boundary (S<sub>gb</sub>). The NO<sub>2</sub>-WO<sub>3</sub> and the Cl<sub>2</sub>-In<sub>2</sub>O<sub>3</sub> systems showed the large S<sub>i</sub>/S<sub>gb</sub> ratio (32-43), while the small ratio (9.7) was obtained in the H<sub>2</sub>S-SnO<sub>2</sub> system at the gas concentration of 0.5-1 ppm. It was found that the clearer nano-gap effect was obtained for the system having the larger S<sub>i</sub>/S<sub>gb</sub> ratio. In the system having large S<sub>i</sub>/S<sub>gb</sub> ratio, the nano-design of electrode structure like nano-gap electrode was important for high sensitivity gas sensors.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 126(10), 573-577, 2006-10-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018780346
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    8525926
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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