Synthesis and Growth of the Facet-tipped In_2O_3 Nanowires

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著者

    • LI Yan
    • Institute of Materials Science and Engineering, Shijiazhuang University of Economics
    • YE Chang H.
    • Institute of Solid State Physics, Chinese Academy of Sciences
    • YANG Lei
    • School of Materials Science and Engineering, Hunan University
    • WANG Cheng
    • Institute of Materials Science and Engineering, Shijiazhuang University of Economics
    • ZHENG Chun R.
    • Institute of Materials Science and Engineering, Shijiazhuang University of Economics
    • ZHANG Li D.
    • Institute of Solid State Physics, Chinese Academy of Sciences

抄録

We report novel structures of the facet-tipped In<SUB>2</SUB>O<SUB>3</SUB> nanowires (FTIONs) via a chemical vapor deposition (CVD) process. The FTIONs grow along [001] direction. These In<SUB>2</SUB>O<SUB>3</SUB> nanostructures with special morphologies can be potentially useful in a variety of fields such as nanoelectronic devices and high-sensitivity gas sensors.

収録刊行物

  • Chemistry letters

    Chemistry letters 36(3), 442-443, 2007-03-05

    公益社団法人 日本化学会

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各種コード

  • NII論文ID(NAID)
    10018829969
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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