Fabrication and Beta-Ray Source Test of Double-Sided Silicon Strip Sensor

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著者

    • Hyun H. J.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Kah D. H.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Kang H. D.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Kim H. J.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Kim Y. I.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Kim Y. J.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Ryu S.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Shim D. H.
    • Department of Physics, Kyungpook National University, Daegu 702-701, Korea
    • Lee Jik
    • School of Physics, Seoul National University, Seoul 151-747, Korea
    • Doh S. H.
    • Department of Physics, Pukyong National University, Pusan 608-020, Korea
    • Kim D. S.
    • Department of Physics, Daegu University, Gyeongbuk 712-714, Korea

抄録

Since a double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed for various uses as a medical imaging sensor, radiation detector, sensing detector in space science, and a silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated a double-sided silicon position sensor in a 5 in. fabrication line. Silicon nitride with a silicon oxide layer was used to prevent damage during sensor fabrication. Since the temperature dependences of the silicon nitride and the silicon oxide are different, the thicknesses of the Si3N4 and SiO2 layers were optimized using the ATHENA process simulation to avoid cracks. We present the measurement results of the electrical characteristics of the sensor such as leakage current and capacitance as a function of reverse bias voltage. We performed tests on the sensor using a 90Sr radioactive source and measured the signal-to-noise ratio of the prototype sensor.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3A), 892-896, 2007-03-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018866525
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8687837
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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