Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt–H2 Complex in Silicon

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We have studied the local motion of hydrogen around a platinum impurity in Si, which was directly probed by measuring the recovery process of stress-induced reorientation of the Pt–H2 complex by isothermal deep-level transient spectroscopy (IT-DLTS). We found that hydrogen more easily moved in the singly negative charge state of the Pt–H2 complex than in the doubly negative charge state, and determined the activation energies for the recovery process to be 0.28 and 0.4 eV in the singly and doubly negative charge states, respectively, from a series of isothermal annealing experiments. We also found that the recovery rate of the Pt–D2 complex in the singly negative charge state is 80% that of the Pt–H2 complex with the same activation energy of 0.28 eV. This isotope effect clearly proves that both complexes have the same atomic configuration and that their recovery process is governed by the atomic jump of hydrogen (deuterium).

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3A), 907-912, 2007-03-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018866557
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8687866
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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