# Palladium Diffusion Transport in n-Type GaAs

## 抄録

The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are $8.4\times 10^{-13}$, $2.25\times 10^{-12}$, and $9.51\times 10^{-12}$ cm2/s, respectively, at temperatures of 400, 550, and 850 °C. The Pd diffusion constant and activation energy in GaAs are calculated as $3.54\times 10^{-10}$ cm2/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3A), 968-970, 2007-03-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018866768
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
SHO
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
8687950
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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