Palladium Diffusion Transport in n-Type GaAs

この論文にアクセスする

この論文をさがす

著者

    • Yeh Der-Hwa Yeh Der-Hwa
    • Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tashi, Taoyuan 335, Taiwan, R.O.C.
    • Hsieh Li-Zen Hsieh Li-Zen
    • Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tashi, Taoyuan 335, Taiwan, R.O.C.
    • Jeng Ming-Jer
    • Department of Electronic Engineering, Chang-Gung University, 259, Wen-Hwa 1 Road, Kwei-Shan, Taoyuan 333, Taiwan, R.O.C.
    • Kuei Ping-Yu
    • Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tashi, Taoyuan 335, Taiwan, R.O.C.

抄録

The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are $8.4\times 10^{-13}$, $2.25\times 10^{-12}$, and $9.51\times 10^{-12}$ cm2/s, respectively, at temperatures of 400, 550, and 850 °C. The Pd diffusion constant and activation energy in GaAs are calculated as $3.54\times 10^{-10}$ cm2/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3A), 968-970, 2007-03-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  15件中 1-15件 を表示

  • <no title>

    WOODBURY H. H.

    Phys. Rev. 126, 466, 1962

    被引用文献1件

  • <no title>

    CHENG S. Y.

    Mater. Chem. Phys. 78, 525, 2002

    被引用文献1件

  • <no title>

    SALEHI A.

    Sens. Actuators B 113, 419, 2006

    被引用文献1件

  • <no title>

    GHANDHI S. K.

    VLSI Fabrication Principles, 1994

    被引用文献1件

  • <no title>

    SZE S. M.

    Semiconductor Devices Physics and Technology, 1985

    被引用文献1件

  • <no title>

    SO L.

    Solid-State Electron. 21, 887, 1978

    被引用文献1件

  • <no title>

    PALS J. A.

    Solid-State Electron. 17, 1139, 1974

    被引用文献1件

  • <no title>

    SO L.

    Solid-State Electron. 20, 113, 1977

    被引用文献1件

  • <no title>

    ISLAM M. S.

    Thin Solid Films 292, 264, 1997

    被引用文献1件

  • <no title>

    PIRLING T.

    Mater. Sci. Eng. B 29, 70, 1995

    被引用文献1件

  • <no title>

    SANDS T.

    J. Appl. Phys. 62, 2070, 1987

    被引用文献1件

  • <no title>

    SINGH R.

    J. Appl. Phys. 91, 411, 2002

    被引用文献1件

  • <no title>

    ISLAM M. S.

    Thin Solid Films 308, 607, 1997

    被引用文献1件

  • <no title>

    OLOWOLAFE J. O.

    J. Appl. Phys. 50, 955, 1979

    被引用文献1件

  • <no title>

    SINHA A. K.

    IEEE Trans. Electron Devices 22, 218, 1975

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10018866768
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8687950
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ