Palladium Diffusion Transport in n-Type GaAs

Abstract

The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are $8.4\times 10^{-13}$, $2.25\times 10^{-12}$, and $9.51\times 10^{-12}$ cm2/s, respectively, at temperatures of 400, 550, and 850 °C. The Pd diffusion constant and activation energy in GaAs are calculated as $3.54\times 10^{-10}$ cm2/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.

Journal

• Jpn J Appl Phys

Jpn J Appl Phys 46(3A), 968-970, 2007-03-15

INSTITUTE OF PURE AND APPLIED PHYSICS

References:  15

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Codes

• NII Article ID (NAID)
10018866768
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
SHO
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
8687950
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  NDL  JSAP

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