Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
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For the realization of highly reliable phase-change memory devices, it is very important to understand their operational failure modes. We presented the failure behavior of devices using Ge2Sb2Te5 (GST) as a phase-change material, in which the drift phenomenon of the current condition for reset and the degradation of switching speed for set were typically observed for some fabricated devices. The studies by a transmission electron microscopy (TEM) and an energy-dispersive X-ray spectroscopy (EDS) suggested that the compositional change of GST within the device is the reason for these results. It was also confirmed that the unexpected formation of a Ge–Te-based alloy may make the set speed slow down to 100 μs.
- Jpn J Appl Phys
Jpn J Appl Phys 46(4), L99-L102, 2007-02-25
INSTITUTE OF PURE AND APPLIED PHYSICS