Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5

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著者

    • Yoon Sung-Min Yoon Sung-Min
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Choi Kyu-Jeong Choi Kyu-Jeong
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Lee Nam-Yeal [他] Lee Nam-Yeal
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Lee Seung-Yun
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Park Young-Sam
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
    • Yu Byoung-Gon
    • IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea

抄録

For the realization of highly reliable phase-change memory devices, it is very important to understand their operational failure modes. We presented the failure behavior of devices using Ge2Sb2Te5 (GST) as a phase-change material, in which the drift phenomenon of the current condition for reset and the degradation of switching speed for set were typically observed for some fabricated devices. The studies by a transmission electron microscopy (TEM) and an energy-dispersive X-ray spectroscopy (EDS) suggested that the compositional change of GST within the device is the reason for these results. It was also confirmed that the unexpected formation of a Ge–Te-based alloy may make the set speed slow down to 100 μs.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(4), L99-L102, 2007-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018867907
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8661914
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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