Fabrication of $a$-Plane GaN Substrate Using the Sr–Na Flux Liquid Phase Epitaxy Technique

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著者

    • Kawahara Minoru [他] Kawahara Minoru
    • Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Kawamura Fumio
    • Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Yoshimura Masashi
    • Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Mori Yusuke
    • Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Sasaki Takatomo
    • Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    • Armitage Rob
    • Matsushita Electric Works, Ltd., 1048, Kadoma, Osaka 571-8686, Japan
    • Hirayama Hideki
    • Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

抄録

We report the fabrication of $a$-plane GaN single crystal substrates grown by the Na flux method. In this research, Sr was added into the flux system as additive to control the crystal habit of GaN single crystals. As the amount of Sr in the melt increased, it was found that the GaN crystal shape changed from pyramidal to prismatic crystals elongated parallel to the $\langle 0001 \rangle$ direction. Additionally, liquid phase epitaxy (LPE) GaN crystals were grown in Sr–Na solution on $a$-plane GaN templates fabricated by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. $\omega$-scan X-ray diffraction measurements showed that the full width at half maximum (FWHM) of the $(11\bar{2}0)$ plane of the LPE GaN crystal was smaller (236 arcsec) than that of the $a$-plane of the GaN template (1152 arcsec).

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(4), L103-L106, 2007-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018867918
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8661921
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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