Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface

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著者

    • Kimoto Kenji Kimoto Kenji
    • MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
    • Tada Tetsuya Tada Tetsuya
    • MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
    • Kanayama Toshihiko Kanayama Toshihiko
    • MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

抄録

We demonstrate that the Schottky barrier height (SBH) of CoSi2/$n$-Si diodes is efficiently modulated by charge transfer doping from the implanted Cs ions segregated at the SiO2/Si interface. The current–voltage characteristics and their temperature dependence revealed that the SBH reduced from the initial 0.52 to 0.06 eV with a Cs dose of $5\times 10^{13}$ cm-2 and to the ohmic feature for a dose exceeding $5\times 10^{14}$ cm-2. This SBH reduction is attributed to barrier thinning and image-force barrier lowering resulting from band bending due to the positive Cs ions segregated at the SiO2/Si interface above the CoSi2 contact.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(5), L110-L112, 2007-02-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018867944
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8661947
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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