Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface

• Kenji Kimoto

• Tetsuya Tada

• Toshihiko Kanayama

Bibliographic Information

Other Title

• Modulation of CoSi2 Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2 Si Interface

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (4-7), L110-112, 2007-02

  Tokyo : Japan Society of Applied Physics

Keywords

• shallow junction
• cesium ion implantation
• CoSi2 contact

Details

• CRID: 1520291855244698240
• NII Article ID: 10018867944
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8661947
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8661947
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles