High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates

• Anurag Tyagi

• Hong Zhong

• Natalie N. Fellows

Bibliographic Information

Other Title

• High Brightness Violet InGaN GaN Light Emitting Diodes on Semipolar 1011 Bulk GaN Substrates

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (4-7), L129-131, 2007-02

  Tokyo : Japan Society of Applied Physics

Keywords

• (1011) plane
• light-emitting diode
• GaN bulk substrate

Details

• CRID: 1523388080629206144
• NII Article ID: 10018868029
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8662020
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8662020
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles