リソグラフィ用レーザー生成プラズマ極端紫外光源 [in Japanese] Laser-Produced Plasma EUV Light Source for Microlithography [in Japanese]
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The current status of the laser produced plasma light source development for EUV lithography is presented. Our key technology is based on an RF-excited CO<SUB>2</SUB> driver laser combined with a Sn droplet target, because this approach enables cost-effective high-conversion efficiency. The RF-excited CO<SUB>2</SUB> laser has a MOPA (master oscillator power amplifier) configuration. It currently generates an average output power of 2.6kW at 130kHz repetition rate. Due to negligible wavefront distortion of the laser beam during amplification, a laser focus of 100μm (FWHM) has been obtained. The Sn target and magnetic ion mitigation development as well as an evaluation of the collector mirror lifetime are presented.
rle 35(3), 148-153, 2007-03-15
The Laser Society of Japan