Effect of Sputtering Power of Aluminum Film in Aluminum Induced Crystallization of Low Temperature Polycrystalline Silicon Film
In this study we produced a low-temperature polycrystalline silicon (LTPS) film by aluminum induced crystallization (AIC) on a Corning EAGLE2000 glass substrate. Five types of specimen, with the DC sputtering powers of aluminum films of 100, 200, 400, 800, and 1600 W, were prepared. Crystal quality, surface morphology, roughness, and film stress were analyzed. Results show that surface roughness increases proportionally with sputtering power. The numbers of bulges and cracks observed on the polycrystalline silicon (poly-Si) thin film surface increase with sputtering power. The calculated film stresses are tensile when the sputtering powers are 100 and 200 W but they become compressive as the sputtering power is further increased. The optimal aluminum film sputtering power range for inducing the crystallization of amorphous silicon is also discussed.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(4A), 1635-1639, 2007-04-15
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics